Memristor a portmanteau of “memory resistor”) is a passive two-terminal electrical component envisioned as afundamental non-linear circuit element relating charge and magnetic fluxlinkage. The memristor is currently under development by a team at HewlettPackard.
When current flows in one direction through the device, the electrical resistance increases; and whencurrent flows in the opposite direction, the resistance decreases. When thecurrent is stopped, the component retains the last resistance that it had, andwhen the flow of charge starts again, the resistance of the circuit will bewhat it was when it was last active. It has a regime of operation with an approximately linear charge-resistance relationship as long as the time-integral of the current stays within certain bounds.
Memristor theory was formulated and named by Leon Chua in a 1971 paper. In 2008, a team at HP Labs announced the development of a switching memristor based on a thin film of titanium dioxide. These devices are beingdeveloped for application in nanoelectronic memories, computer logic, and neuromorphic computer architectures. In October 2011, the same team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM.

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